| PART |
Description |
Maker |
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTM8N20 MTM15N45 |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
TRSYS
|
| IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| ST744 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| ST704 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| SR703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| SM401 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
http://
POLYFET[Polyfet RF Devices]
|
